Invention Grant
- Patent Title: Narrow body field-effect transistor structures with free-standing extension regions
- Patent Title (中): 具有独立扩展区域的窄体场效应晶体管结构
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Application No.: US13611900Application Date: 2012-09-12
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Publication No.: US09048258B2Publication Date: 2015-06-02
- Inventor: Josephine B. Chang , Michael A. Guillorn , Amlan Majumdar , Lidija Sekaric
- Applicant: Josephine B. Chang , Michael A. Guillorn , Amlan Majumdar , Lidija Sekaric
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agent Louis J Percello
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L29/78 ; H01L29/66 ; H01L29/786
Abstract:
Narrow-body FETs, such as, FinFETs and trigates, exhibit superior short-channel characteristics compared to thick-body devices, such as planar bulk Si FETs and planar partially-depleted SOI (PDSOI) FETs. A common problem, however, with narrow-body devices is high series resistance that often negates the short-channel benefits. The high series resistance is due to either dopant pile-up at the SOI/BOX interface or dopant diffusion into the BOX. This disclosure describes a novel narrow-body device geometry that is expected to overcome the high series resistance problem.
Public/Granted literature
- US20130285126A1 NARROW BODY FIELD-EFFECT TRANSISTOR STRUCTURES WITH FREE-STANDING EXTENSION REGIONS Public/Granted day:2013-10-31
Information query
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