Invention Grant
- Patent Title: Manufacturing method of non-volatile memory
- Patent Title (中): 非易失性存储器的制造方法
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Application No.: US14314830Application Date: 2014-06-25
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Publication No.: US09048263B2Publication Date: 2015-06-02
- Inventor: Chih-Chieh Cheng , Shih-Guei Yan , Cheng-Hsien Cheng , Wen-Jer Tsai
- Applicant: MACRONIX International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/8247
- IPC: H01L21/8247 ; H01L29/66 ; H01L29/423 ; H01L29/788 ; H01L29/792 ; H01L27/115
Abstract:
A non-volatile memory and a manufacturing method thereof are provided. In this method, a first oxide layer having a protrusion is formed on a substrate. A pair of doped regions is formed in the substrate at two sides of the protrusion. A pair of charge storage spacers is formed on the sidewalls of the protrusion. A second oxide layer is formed on the first oxide layer and the pair of charge storage spacers. A conductive layer is formed on the second oxide layer, wherein the conductive layer is located completely on the top of the pair of charge storage spacers.
Public/Granted literature
- US20140308791A1 MANUFACTURING METHOD OF NON-VOLATILE MEMORY Public/Granted day:2014-10-16
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