Invention Grant
US09048268B2 Method and equipment for removing photoresist residue after dry etch
有权
干蚀刻后去除光致抗蚀剂残留物的方法和设备
- Patent Title: Method and equipment for removing photoresist residue after dry etch
- Patent Title (中): 干蚀刻后去除光致抗蚀剂残留物的方法和设备
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Application No.: US13785172Application Date: 2013-03-05
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Publication No.: US09048268B2Publication Date: 2015-06-02
- Inventor: Mu-Chen Chen , Yi-Tse Huang , Wei-Fan Liao , Han-Ti Hsiaw , Chia-I Shen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/67 ; H01L21/312 ; H01L21/322 ; H01L21/02 ; H01L21/3065 ; H01L21/308
Abstract:
A method for removing photoresist residue includes etching a photoresist layer disposed over a front side of a semiconductor substrate during fabrication of a semiconductor device, and exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen. The method further includes cleaning at least one of the front side and the back side of the semiconductor substrate with a cleaning fluid.
Public/Granted literature
- US20140256138A1 METHOD AND EQUIPMENT FOR REMOVING PHOTORESIST RESIDUE AFTER DRY ETCH Public/Granted day:2014-09-11
Information query
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