Invention Grant
- Patent Title: Semiconductor device and method for producing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13765129Application Date: 2013-02-12
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Publication No.: US09048281B2Publication Date: 2015-06-02
- Inventor: Naohiro Shimizu , Shoji Yokoi
- Applicant: NGK Insulators, Ltd.
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JP2012-031722 20120216
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L31/111 ; H01L29/739 ; H01L29/36 ; H01L29/66 ; H01L21/225
Abstract:
A semiconductor device satisfies the condition Db≦(⅓)×Da, in which Da represents a distance between a top surface of a cathode segment and an end of an embedded gate segment facing an anode segment, and Db represents a distance between a highest-impurity concentration portion in the embedded gate segment and an end of the cathode segment facing the anode segment.
Public/Granted literature
- US20130214327A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2013-08-22
Information query
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