Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14253409Application Date: 2014-04-15
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Publication No.: US09048293B2Publication Date: 2015-06-02
- Inventor: Un Hee Lee
- Applicant: SK HYNIX INC.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2011-0008005 20110126
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L27/108 ; H01L49/02
Abstract:
A semiconductor device and a method for manufacturing the same are disclosed. An additional spacer is formed at a lateral surface of an upper part of the bit line so that the distance of insulation films between a storage node and a neighboring storage node contact plug is increased. Accordingly, the distance between the storage node and the neighboring storage node contact is guaranteed and a bridge failure is prevented.
Public/Granted literature
- US20140227851A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-08-14
Information query
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