Invention Grant
- Patent Title: Methods for depositing manganese and manganese nitrides
- Patent Title (中): 沉积锰和锰氮化物的方法
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Application No.: US13860618Application Date: 2013-04-11
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Publication No.: US09048294B2Publication Date: 2015-06-02
- Inventor: Jing Tang , Zhefeng Li , Paul F. Ma , David Thompson
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; C23C16/34 ; H01L21/285 ; H01L23/532
Abstract:
Described are manganese-containing films, as well as methods for providing the manganese-containing films. Doping manganese-containing films with Co, Mn, Ru, Ta, Al, Mg, Cr, Nb, Ti or V allows for enhanced copper barrier properties of the manganese-containing films. Also described are methods of providing films with a first layer comprising manganese silicate and a second layer comprising a manganese-containing film.
Public/Granted literature
- US20130273733A1 Methods for Depositing Manganese and Manganese Nitrides Public/Granted day:2013-10-17
Information query
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