Invention Grant
US09048296B2 Method to fabricate copper wiring structures and structures formed thereby
有权
制造铜布线结构和由此形成的结构的方法
- Patent Title: Method to fabricate copper wiring structures and structures formed thereby
- Patent Title (中): 制造铜布线结构和由此形成的结构的方法
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Application No.: US13025322Application Date: 2011-02-11
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Publication No.: US09048296B2Publication Date: 2015-06-02
- Inventor: Fenton Read McFeely , Chih-Chao Yang
- Applicant: Fenton Read McFeely , Chih-Chao Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L23/532
Abstract:
Techniques formation of high purity copper (Cu)-filled lines and vias are provided. In one aspect, a method of fabricating lines and vias filled with high purity copper with is provided. The method includes the following steps. A via is etched in a dielectric. The via is lined with a diffusion barrier. A thin ruthenium (Ru) layer is conformally deposited onto the diffusion barrier. A Cu layer is deposited on the Ru layer by a sputtering process. A reflow anneal is performed to eliminate voids in the lines and vias.
Public/Granted literature
- US20120205804A1 METHOD TO FABRICATE COPPER WIRING STRUCTURES AND STRUCTURES FORMED TEHREBY Public/Granted day:2012-08-16
Information query
IPC分类:
