Invention Grant
- Patent Title: Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device
- Patent Title (中): 微晶半导体膜及其制造方法以及半导体装置的制造方法
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Application No.: US13355340Application Date: 2012-01-20
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Publication No.: US09048327B2Publication Date: 2015-06-02
- Inventor: Tetsuhiro Tanaka , Takashi Ienaga , Ryu Komatsu , Erika Kato , Ryota Tajima , Yasuhiro Jinbo
- Applicant: Tetsuhiro Tanaka , Takashi Ienaga , Ryu Komatsu , Erika Kato , Ryota Tajima , Yasuhiro Jinbo
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2011-012496 20110125
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/786 ; H01L21/02 ; H01L29/04 ; H01L29/66
Abstract:
An embodiment of the present invention is a microcrystalline semiconductor film having a thickness of more than or equal to 70 nm and less than or equal to 100 nm and including a crystal grain partly projecting from a surface of the microcrystalline semiconductor film. The crystal grain has an orientation plane and includes a crystallite having a size of 13 nm or more. Further, the film density of the microcrystalline semiconductor film is higher than or equal to 2.25 g/cm3 and lower than or equal to 2.35 g/cm3, preferably higher than or equal to 2.30 g/cm3 and lower than or equal to 2.33 g/cm3.
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