Invention Grant
- Patent Title: Device including two power semiconductor chips and manufacturing thereof
- Patent Title (中): 装置包括两个功率半导体芯片及其制造
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Application No.: US13289667Application Date: 2011-11-04
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Publication No.: US09048338B2Publication Date: 2015-06-02
- Inventor: Khalil Hosseini , Manfred Mengel , Joachim Mahler , Franz-Peter Kalz
- Applicant: Khalil Hosseini , Manfred Mengel , Joachim Mahler , Franz-Peter Kalz
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L23/495 ; H01L23/051 ; H01L23/31
Abstract:
A device includes a first power semiconductor chip having a first face and a second face opposite to the first face with a first contact pad arranged on the first face. The first contact pad is an external contact pad. The device further includes a first contact clip attached to the second face of the first power semiconductor chip. A second power semiconductor chip is attached to the first contact clip, and a second contact clip is attached to the second power semiconductor chip.
Public/Granted literature
- US20130113114A1 Device Including Two Power Semiconductor Chips and Manufacturing Thereof Public/Granted day:2013-05-09
Information query
IPC分类:
