Invention Grant
- Patent Title: Integrated circuit capacitor and method
- Patent Title (中): 集成电路电容及方法
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Application No.: US13451428Application Date: 2012-04-19
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Publication No.: US09048341B2Publication Date: 2015-06-02
- Inventor: Shih-Hung Chen , Kuang-Yeu Hsieh
- Applicant: Shih-Hung Chen , Kuang-Yeu Hsieh
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Agent James F. Hann
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L49/02

Abstract:
An example of a capacitor includes a series of ridges and trenches and an interconnect region on the integrated circuit substrate. The series of ridges and trenches and the interconnect region have a capacitor foundation surface with a serpentine cross-sectional shape on the series of ridges and trenches. Electrical conductors are electrically connected to the electrode layers from the interconnect region for access to the electrode layers of the capacitor assembly.
Public/Granted literature
- US20130277799A1 Integrated Circuit Capacitor and Method Public/Granted day:2013-10-24
Information query
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