Invention Grant
- Patent Title: Semiconductor device stacked structure
- Patent Title (中): 半导体器件堆叠结构
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Application No.: US13450482Application Date: 2012-04-19
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Publication No.: US09048342B2Publication Date: 2015-06-02
- Inventor: Ding-Ming Kwai , Yung-Fa Chou , Chiao-Ling Lung , Jui-Hung Chien
- Applicant: Ding-Ming Kwai , Yung-Fa Chou , Chiao-Ling Lung , Jui-Hung Chien
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW100147767A 20111221
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L25/065 ; H01L23/58

Abstract:
A semiconductor device stacked structure is disclosed, which includes multiple semiconductor devices and at least one reinforcing structure. The semiconductor devices are stacked on one another. At least one semiconductor device has at least one through silicon via. Each reinforcing structure surrounds a corresponding one of the at least one through silicon via and is electrically insulated from the semiconductor devices. The at least one reinforcing structure includes multiple reinforcing elements and at least one connecting element. Each reinforcing element is disposed between the semiconductor devices. Vertical projections of the reinforcing elements on a plane define a close region, and a projection of the at least one through silicon via on the plane is located within the close region. The connecting element is located in an overlapping region of the vertical projections of the reinforcing elements on the plane, for connecting the reinforcing elements to form the reinforcing structure.
Public/Granted literature
- US20130161819A1 SEMICONDUCTOR DEVICE STACKED STRUCTURE Public/Granted day:2013-06-27
Information query
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