Invention Grant
- Patent Title: Photoelectric conversion device
- Patent Title (中): 光电转换装置
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Application No.: US13163091Application Date: 2011-06-17
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Publication No.: US09048356B2Publication Date: 2015-06-02
- Inventor: Yoshinobu Asami
- Applicant: Yoshinobu Asami
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2010-138889 20100618
- Main IPC: H01L31/046
- IPC: H01L31/046 ; H01L31/028 ; H01L27/30 ; H01L31/0368 ; H01L31/0376 ; H01L31/0687 ; H01L31/0725 ; H01L31/076

Abstract:
A photoelectric conversion device includes a first cell including a photoelectric conversion layer, a second cell over the first cell including a photoelectric conversion layer formed of a material having a wider band gap than that of the first cell, first and second electrodes under a surface of the first cell which is opposite to the second cell, and a third electrode over a surface of the second cell which is opposite to the first cell. The first and second cells each include a p-n or p-i-n junction, the first and second cells are in contact with each other and a p-n junction is formed in a contact portion therebetween, the first cell is electrically connected to the first and second electrodes to form a back contact structure, and the second cell is electrically connected to the third electrode.
Public/Granted literature
- US20110308568A1 Photoelectric Conversion Device Public/Granted day:2011-12-22
Information query
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