Invention Grant
- Patent Title: Producing method of semiconductor device
- Patent Title (中): 半导体器件的生产方法
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Application No.: US13944577Application Date: 2013-07-17
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Publication No.: US09048401B2Publication Date: 2015-06-02
- Inventor: Munehisa Mitani , Yuki Ebe , Yasunari Ooyabu
- Applicant: NITTO DENKO CORPORATION
- Applicant Address: JP Osaka
- Assignee: NITTO DENKO CORPORATION
- Current Assignee: NITTO DENKO CORPORATION
- Current Assignee Address: JP Osaka
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-158945 20120717; JP2013-133413 20130626
- Main IPC: H01L33/52
- IPC: H01L33/52 ; H01L33/00 ; H01L21/56
Abstract:
A method for producing a semiconductor device includes a preparing step of preparing a board formed with a concave portion, a terminal disposed in or around the concave portion, and a semiconductor element disposed in the concave portion; a wire-bonding step of connecting the terminal to the semiconductor element with a wire; a pressure-welding step of pressure-welding an encapsulating sheet to the board so as to be in close contact with the upper surface of a portion around the concave portion and to be separated from the upper surface of the concave portion under a reduced pressure atmosphere; and an atmosphere releasing step of releasing the board and the encapsulating sheet under an atmospheric pressure atmosphere.
Public/Granted literature
- US20140024153A1 PRODUCING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2014-01-23
Information query
IPC分类:
