Invention Grant
US09048409B2 Wafer-level light emitting diode package and method of fabricating the same 有权
晶圆级发光二极管封装及其制造方法

Wafer-level light emitting diode package and method of fabricating the same
Abstract:
A light emitting diode (LED) package includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, the first and second semiconductor layers having different conductivity types, a first contact layer disposed on the first semiconductor layer, a second contact layer disposed on the second semiconductor layer, a first insulation layer contacting the first contact layer, a second insulation layer disposed on the first insulation layer, a first bump disposed on a first side of the semiconductor stack, the first bump being electrically connected to the first contact layer, a second bump disposed on the first side of the semiconductor stack, the second bump being electrically connected to the second contact layer, and a third insulation layer disposed on side surfaces of the first bump and the second bump.
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