Invention Grant
- Patent Title: Wafer-level light emitting diode package and method of fabricating the same
- Patent Title (中): 晶圆级发光二极管封装及其制造方法
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Application No.: US14462029Application Date: 2014-08-18
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Publication No.: US09048409B2Publication Date: 2015-06-02
- Inventor: Won Cheol Seo , Dae Sung Cho
- Applicant: SEOUL SEMICONDUCTOR CO., LTD.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Semiconductor Co., Ltd.
- Current Assignee: Seoul Semiconductor Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2010-0092807 20100924; KR10-2010-0092808 20100924
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/62 ; H01L27/15 ; H01L33/10 ; H01L33/50 ; H01L33/00 ; H01L33/20 ; H01L33/38 ; H01L33/46 ; H01L33/48

Abstract:
A light emitting diode (LED) package includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, the first and second semiconductor layers having different conductivity types, a first contact layer disposed on the first semiconductor layer, a second contact layer disposed on the second semiconductor layer, a first insulation layer contacting the first contact layer, a second insulation layer disposed on the first insulation layer, a first bump disposed on a first side of the semiconductor stack, the first bump being electrically connected to the first contact layer, a second bump disposed on the first side of the semiconductor stack, the second bump being electrically connected to the second contact layer, and a third insulation layer disposed on side surfaces of the first bump and the second bump.
Public/Granted literature
- US20140353708A1 WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-12-04
Information query
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