Invention Grant
- Patent Title: Magnetic memory devices including magnetic layers separated by tunnel barriers
- Patent Title (中): 磁存储器件包括由隧道屏障隔开的磁性层
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Application No.: US14206053Application Date: 2014-03-12
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Publication No.: US09048412B2Publication Date: 2015-06-02
- Inventor: Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
- Applicant: Sechung Oh , Jangeun Lee , Jeahyoung Lee , Woojin Kim , Woo Chang Lim , Junho Jeong , Sukhun Choi
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2009-0086084 20090911; KR10-2009-0093306 20090930
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; B82Y25/00 ; G11C11/16 ; H01F10/32 ; H01L43/08 ; H01L43/10 ; H01F10/12
Abstract:
A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer.
Public/Granted literature
- US20140191346A1 MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNNEL BARRIERS Public/Granted day:2014-07-10
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