Invention Grant
- Patent Title: Nonvolatile memory device and processing method
- Patent Title (中): 非易失性存储器件和处理方法
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Application No.: US12341059Application Date: 2008-12-22
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Publication No.: US09048414B2Publication Date: 2015-06-02
- Inventor: Nadine Gergel-Hackett , Behrang Hamadani , Curt A. Richter , David James Gundlach
- Applicant: Nadine Gergel-Hackett , Behrang Hamadani , Curt A. Richter , David James Gundlach
- Applicant Address: US DC Washington
- Assignee: THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
- Current Assignee: THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
- Current Assignee Address: US DC Washington
- Agency: Carlson, Gaskey & Olds, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L45/00 ; H01L27/10
Abstract:
A method of processing a nonvolatile memory device includes forming a first electrode, depositing a layer of sol-gel solution on the first electrode, hydrolyzing the layer of sol-gel solution to form a layer of variable electric resistance material, and forming a second electrode on the layer of variable electric resistance material.
Public/Granted literature
- US20090184397A1 NONVOLATILE MEMORY DEVICE AND PROCESSING METHOD Public/Granted day:2009-07-23
Information query
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