Invention Grant
- Patent Title: Variable resistance memory device and methods of forming the same
- Patent Title (中): 可变电阻存储器件及其形成方法
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Application No.: US14022984Application Date: 2013-09-10
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Publication No.: US09048421B2Publication Date: 2015-06-02
- Inventor: Dongjun Seong , Yoocheol Shin
- Applicant: Dongjun Seong , Yoocheol Shin
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0101872 20120914
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
Variable resistance memory devices and methods of forming the same are disclosed. The devices may include an additional barrier layer that is a portion of a variable resistance layer and that is formed before forming a horizontal electrode layer. Due to the presence of the additional barrier layer, it may be possible to cure loss or damage of the variable resistance layer.
Public/Granted literature
- US20140077143A1 Variable Resistance Memory Device and Methods of Forming the Same Public/Granted day:2014-03-20
Information query
IPC分类:
