Invention Grant
- Patent Title: Short gain cavity distributed bragg reflector laser
- Patent Title (中): 短增益腔分布式布拉格反射激光器
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Application No.: US13795384Application Date: 2013-03-12
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Publication No.: US09048618B2Publication Date: 2015-06-02
- Inventor: Yasuhiro Matsui
- Applicant: FINISAR CORPORATION
- Applicant Address: US CA Sunnyvale
- Assignee: FINISAR CORPORATION
- Current Assignee: FINISAR CORPORATION
- Current Assignee Address: US CA Sunnyvale
- Agency: Maschoff Brennan
- Main IPC: H01S3/08
- IPC: H01S3/08 ; H01S5/0625 ; H01S5/028 ; H01S5/042 ; H01S5/10 ; H01S5/12

Abstract:
A long wavelength, short cavity laser can include: an active region or gain cavity having a length from about 10 microns to about 150 microns; a gap region adjacent to the active region and having a gap length that is less than 30 microns or less than the length of the active region; and a distributed Bragg reflector (“DBR”) region having a grating with a kappa of at least about 200 cm−1, wherein the gap region is between the active region and the DBR region, and wherein the laser lases at a long wavelength side of a Bragg peak of the laser. The laser can have a second DBR region opposite of the first DBR region.
Public/Granted literature
- US20140269807A1 SHORT GAIN CAVITY DISTRIBUTED BRAGG REFLECTOR LASER Public/Granted day:2014-09-18
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