A bi-section type GaN-based semiconductor laser device that has a configuration and a structure in which damage is less likely to be caused in a region in a saturable absorption region that faces a first light emission region is provided. The semiconductor laser device includes a first light emission region, a second light emission region, a saturable absorption region sandwiched by the foregoing light emission regions, a first electrode, and a second electrode. Laser light is emitted from an end face on a second light emission region side thereof. The second electrode is configured of a first portion, a second portion, and a third portion. 1