Invention Grant
US09048658B2 Resistive switching for non volatile memory device using an integrated breakdown element
有权
使用集成击穿元件的非易失性存储器件的电阻式开关
- Patent Title: Resistive switching for non volatile memory device using an integrated breakdown element
- Patent Title (中): 使用集成击穿元件的非易失性存储器件的电阻式开关
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Application No.: US14265845Application Date: 2014-04-30
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Publication No.: US09048658B2Publication Date: 2015-06-02
- Inventor: Wei Lu , Sung Hyun Jo
- Applicant: The Regents of the University of Michigan
- Applicant Address: US MI Ann Arbor
- Assignee: The Regents of The University of Michigan
- Current Assignee: The Regents of The University of Michigan
- Current Assignee Address: US MI Ann Arbor
- Agency: Reising Ethington P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/36 ; H02H9/08 ; G11C13/00 ; H01L27/24 ; H01L45/00

Abstract:
A method of suppressing propagation of leakage current in an array of switching devices. The method includes providing a dielectric breakdown element integrally and serially connected to a switching element within each of the switching device. A read voltage (for example) is applied to a selected cell. The propagation of leakage current is suppressed by each of the dielectric breakdown element in unselected cells in the array. The read voltage is sufficient to cause breakdown in the selected cells but insufficient to cause breakdown in the serially connected, unselected cells in a specific embodiment. Methods to fabricate of such devices and to program, to erase and to read the device are provided.
Public/Granted literature
- US20140233301A1 RESISTIVE SWITCHING FOR NON VOLATILE MEMORY DEVICE USING AN INTEGRATED BREAKDOWN ELEMENT Public/Granted day:2014-08-21
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