Invention Grant
- Patent Title: Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
- Patent Title (中): 包含在压电层内形成的桥的体声波谐振器
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Application No.: US13208909Application Date: 2011-08-12
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Publication No.: US09048812B2Publication Date: 2015-06-02
- Inventor: Dariusz Burak , Phil Nikkel , Jyrki Kaitila , John D. Larson, III , Alexandre Shirakawa
- Applicant: Dariusz Burak , Phil Nikkel , Jyrki Kaitila , John D. Larson, III , Alexandre Shirakawa
- Applicant Address: SG Singapore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H03H9/54
- IPC: H03H9/54 ; H03H9/13 ; H03H9/02 ; H03H3/04 ; H03H9/17 ; H03H9/58
Abstract:
A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.
Public/Granted literature
- US20120218060A1 BULK ACOUSTIC WAVE RESONATOR COMPRISING BRIDGE FORMED WITHIN PIEZOELECTRIC LAYER Public/Granted day:2012-08-30
Information query
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