Invention Grant
US09050773B2 Dicing tape-integrated film for semiconductor back surface, and process for producing semiconductor device
有权
用于半导体背面的切割带集成膜，以及用于制造半导体器件的工艺
- Patent Title: Dicing tape-integrated film for semiconductor back surface, and process for producing semiconductor device
- Patent Title (中): 用于半导体背面的切割带集成膜，以及用于制造半导体器件的工艺
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Application No.: US14052154Application Date: 2013-10-11
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Publication No.: US09050773B2Publication Date: 2015-06-09
- Inventor: Fumiteru Asai , Goji Shiga , Naohide Takamoto
- Applicant: Nitto Denko Corporation
- Applicant Address: JP Osaka
- Assignee: NITTO DENKO CORPORATION
- Current Assignee: NITTO DENKO CORPORATION
- Current Assignee Address: JP Osaka
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-170920 20100729
- Main IPC: B32B7/12
- IPC: B32B7/12 ; B32B27/00 ; B32B7/02 ; B32B27/08 ; B32B9/00 ; B32B33/00 ; B44C5/08 ; B32B7/06 ; C09J7/02 ; C09J201/00 ; H01L21/68 ; H01L21/683 ; H01L21/56 ; H01L23/00
Abstract:
The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape, in which a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, and in which the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm.
Public/Granted literature
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