A method for providing hermetic sealing within a silicon-insulator composite wafer for manufacturing a hermetically sealed structure, comprising the steps of: patterning a first silicon wafer to have one or more recesses that extend at least partially through the first silicon wafer; filling said recesses with an insulator material able to be anodically bonded to silicon to form a first composite wafer having a plurality of silicon-insulator interfaces and a first contacting surface consisting of insulator material; and using an anodic bonding technique on the first contacting surface and an opposing second contacting surface to create hermetic sealing between the silicon-insulator interfaces, wherein the second contacting surface consists of silicon.