Invention Grant
- Patent Title: Thin-film manufacturing method and apparatus
- Patent Title (中): 薄膜制造方法和装置
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Application No.: US13243044Application Date: 2011-09-23
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Publication No.: US09051644B2Publication Date: 2015-06-09
- Inventor: Tomonori Katano , Katsumi Taniguchi , Kungen Teii
- Applicant: Tomonori Katano , Katsumi Taniguchi , Kungen Teii
- Applicant Address: JP Kawasaki-shi JP Fukuoka-shi
- Assignee: Fuji Electric Co., Ltd.,Kyushu University, National University Corporation
- Current Assignee: Fuji Electric Co., Ltd.,Kyushu University, National University Corporation
- Current Assignee Address: JP Kawasaki-shi JP Fukuoka-shi
- Agency: Venable LLP
- Agent Steven J. Schwarz; Tamatane J. Aga
- Priority: JP2010-246359 20101102
- Main IPC: C23C16/50
- IPC: C23C16/50 ; C23C16/26 ; C23C16/511 ; C23C16/44 ; C23C16/513 ; H01J37/32

Abstract:
A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe.
Public/Granted literature
- US08691348B2 Thin-film manufacturing method and apparatus Public/Granted day:2014-04-08
Information query
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