Invention Grant
- Patent Title: Semiconductor light source
- Patent Title (中): 半导体光源
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Application No.: US13390289Application Date: 2010-06-30
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Publication No.: US09052094B2Publication Date: 2015-06-09
- Inventor: Benjamin Claus Krummacher
- Applicant: Benjamin Claus Krummacher
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cozen O'Connor
- Priority: DE102009037415 20090813
- International Application: PCT/EP2010/059290 WO 20100630
- International Announcement: WO2011/018272 WO 20110217
- Main IPC: F21V14/02
- IPC: F21V14/02 ; F21V14/04 ; H01L25/00 ; H01L25/04 ; F21K99/00 ; F21V7/05 ; F21V7/00 ; F21Y105/00

Abstract:
In at least one embodiment of the semiconductor light source (1), the latter comprises at least two planar elements (2). The planar elements (2) each contain a semiconductor material for producing ultraviolet or visible radiation (R) when the semiconductor light source (1) is in operation. The radiation (R) is in this case emitted at precisely one major face (3) of the planar elements (2). The reflectivity of the planar elements (2) for visible radiation, when the semiconductor light source (1) is not in operation, amounts to at least 80%. The planar elements (2) furthermore exhibit an average diameter (L) of at least 10 mm. Furthermore the major faces (3) of the planar elements (2) are arranged at an angle (α) to one another and facing one another. The angle (α) between the major faces (3) amounts in this case to between 30° and 120° inclusive.
Public/Granted literature
- US20120298888A1 Semiconductor Light Source Public/Granted day:2012-11-29
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