Invention Grant
US09053030B2 Cache memory and control method thereof with cache hit rate 有权
缓存内存及其控制方法,具有缓存命中率

  • Patent Title: Cache memory and control method thereof with cache hit rate
  • Patent Title (中): 缓存内存及其控制方法,具有缓存命中率
  • Application No.: US13144820
    Application Date: 2010-01-25
  • Publication No.: US09053030B2
    Publication Date: 2015-06-09
  • Inventor: Yasushi Kanoh
  • Applicant: Yasushi Kanoh
  • Applicant Address: JP Tokyo
  • Assignee: NEC CORPORATION
  • Current Assignee: NEC CORPORATION
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2009-016224 20090128
  • International Application: PCT/JP2010/050907 WO 20100125
  • International Announcement: WO2010/087310 WO 20100805
  • Main IPC: G06F13/00
  • IPC: G06F13/00 G06F12/08
Cache memory and control method thereof with cache hit rate
Abstract:
A cache memory comprises a data array that stores a cashed block; a first address array that stores an address of the cached block; a second address array that stores an address of a first block to be removed from the data array when a cache miss occurs; and a control unit that transmits to a processor the first block stored in the data array as a cache hit block, when the address stored in the second address array results in a cache hit during a period before a second block which has caused the cache miss is read from a memory and written into the data array.
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