Invention Grant
- Patent Title: NAND flash memory interface
- Patent Title (中): NAND闪存接口
-
Application No.: US13435878Application Date: 2012-03-30
-
Publication No.: US09053066B2Publication Date: 2015-06-09
- Inventor: Venkatesh Ramachandra , Farookh Moogat
- Applicant: Venkatesh Ramachandra , Farookh Moogat
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/16 ; G11C7/10 ; G11C5/06

Abstract:
A NAND flash memory chip has a configurable interface that can communicate with a NAND flash memory controller using either parallel communication or serial communication. Serial communication requires fewer channels. Control information from the NAND flash memory controller uses a small number of channels. Double Data Rate (DDR) communication provides serial communication with adequate data transfer speed.
Public/Granted literature
- US20130262744A1 NAND Flash Memory Interface Public/Granted day:2013-10-03
Information query