Invention Grant
- Patent Title: Spin torque transfer magnetic tunnel junction intelligent sensing
- Patent Title (中): 旋转扭矩传递磁隧道结智能感应
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Application No.: US13420890Application Date: 2012-03-15
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Publication No.: US09053071B2Publication Date: 2015-06-09
- Inventor: Abhishek Banerjee , Raghu Sagar Madala , Wenqing Wu , Kendrick H. Yuen , Chengzhi Pan
- Applicant: Abhishek Banerjee , Raghu Sagar Madala , Wenqing Wu , Kendrick H. Yuen , Chengzhi Pan
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM, Incorporated
- Current Assignee: QUALCOMM, Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
- Main IPC: G06F17/18
- IPC: G06F17/18 ; G11C27/02 ; H03M1/04 ; H03M1/50 ; H03M3/02 ; G11C11/16
Abstract:
Sensor circuitry including probabilistic switching devices, such as spin-transfer torque magnetic tunnel junctions (STT-MTJs), is configured to perform ultra-low power analog to digital conversion and compressive sensing. The analog to digital conversion and compressive sensing processes are performed simultaneously and in a manner that is native to the devices due to their probabilistic switching characteristics.
Public/Granted literature
- US20130245999A1 SPIN TORQUE TRANSFER MAGNETIC TUNNEL JUNCTION INTELLIGENT SENSING Public/Granted day:2013-09-19
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