Invention Grant
- Patent Title: Magnetoresistive sensor for a magnetic storage system read head, and fabrication method thereof
- Patent Title (中): 用于磁存储系统读磁头的磁阻传感器及其制造方法
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Application No.: US13691695Application Date: 2012-11-30
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Publication No.: US09053719B2Publication Date: 2015-06-09
- Inventor: Cheng-Han Yang , Chen-Jung Chien , Christian Kaiser , Yuankai Zheng , Qunwen Leng , Mahendra Pakala
- Applicant: Western Digital (Fremont), LLC
- Applicant Address: US CA Fremont
- Assignee: Western Digital (Fremont), LLC
- Current Assignee: Western Digital (Fremont), LLC
- Current Assignee Address: US CA Fremont
- Main IPC: G11B5/39
- IPC: G11B5/39 ; B82Y10/00

Abstract:
A magnetic read transducer including a magnetoresistive sensor is described, as well as a fabrication method thereof. The magnetoresistive sensor includes a cap layer overlaying a free layer. The cap layer is situated with a first thickness to absorb boron from the free layer. The magnetoresistive sensor is annealed, and boron is diffused from the free layer and absorbed by the cap layer, improving the magnetic performance of the free layer. The cap layer thickness is then reduced to a second thickness, thereby reducing the shield-to-shield (SS) stack spacing of the magnetoresistive sensor and allowing for increased areal recording density.
Public/Granted literature
- US20140154529A1 MAGNETORESISTIVE SENSOR FOR A MAGNETIC STORAGE SYSTEM READ HEAD, AND FABRICATION METHOD THEREOF Public/Granted day:2014-06-05
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