Invention Grant
- Patent Title: Reading method of memory
- Patent Title (中): 记忆的阅读方法
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Application No.: US13540715Application Date: 2012-07-03
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Publication No.: US09053758B2Publication Date: 2015-06-09
- Inventor: Tsung-Yi Chou
- Applicant: Tsung-Yi Chou
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/06 ; G11C7/14
Abstract:
A reading method of a memory is provided. The memory has a turn on window. The reading method comprises the following steps. A reading voltage is provided. The reading voltage is shown if the reading voltage is located in the turn on window. The reading voltage is updated by moving a predetermined distance if the reading voltage is not located in the turn on window. The predetermined distance is cut by half before the step of updating the reading voltage is performed again.
Public/Granted literature
- US20140010028A1 READING METHOD OF MEMORY Public/Granted day:2014-01-09
Information query
