Invention Grant
- Patent Title: Memory interface circuit and semiconductor device
- Patent Title (中): 存储器接口电路和半导体器件
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Application No.: US13779293Application Date: 2013-02-27
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Publication No.: US09053764B2Publication Date: 2015-06-09
- Inventor: Hideo Mochizuki
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2010-247398 20101104
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C7/10 ; G06F13/16

Abstract:
There is a need to provide a small-sized memory interface circuit capable of adjusting timing between a strobe signal and a data signal without interrupting a normal memory access.An expected value acquisition latch latches write data in synchronization with a clock signal. A WDLL outputs a write strobe signal WDQS. An RDLL outputs a delayed write strobe signal WDQS_d. A read data latch latches looped-back write data in synchronization with the delayed write strobe signal WDQS_d. A comparator compares the read data latch with an output from the expected value acquisition latch. A register portion stores a delay value to be placed in the RDLL. A register control portion updates a delay value in the register portion in accordance with a comparison result. A delay selection portion places a delay value read from the register portion in the RDLL.
Public/Granted literature
- US20130170304A1 MEMORY INTERFACE CIRCUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2013-07-04
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