Invention Grant
US09053769B2 Semiconductor device capable of increasing data input/output rate
有权
能提高数据输入/输出速率的半导体器件
- Patent Title: Semiconductor device capable of increasing data input/output rate
- Patent Title (中): 能提高数据输入/输出速率的半导体器件
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Application No.: US14161352Application Date: 2014-01-22
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Publication No.: US09053769B2Publication Date: 2015-06-09
- Inventor: Sang Oh Lim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0100442 20130823
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/10

Abstract:
A semiconductor device includes a memory array including memory cells, page buffers suitable for reading data from the memory cells, cache latch circuits suitable for latching read data from the page buffers, and transmitting latched data to data lines in response to a column selection signal, a column selector suitable for outputting the column selection signal to the cache latch circuits through column selection lines in response to a column address, and sense amplifiers suitable for outputting transmitted data of the data lines by sensing voltages of the data lines, in which the cache latch circuits are connected to the column selector and the sense amplifiers through the column selection lines and the data lines, respectively, and have inverse relationship between the column selection lines and the data lines in length.
Public/Granted literature
- US20150055421A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-02-26
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