Invention Grant
US09053781B2 Structure and method for a forming free resistive random access memory with multi-level cell
有权
具有多级单元的形成自由电阻随机存取存储器的结构和方法
- Patent Title: Structure and method for a forming free resistive random access memory with multi-level cell
- Patent Title (中): 具有多级单元的形成自由电阻随机存取存储器的结构和方法
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Application No.: US13624539Application Date: 2012-09-21
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Publication No.: US09053781B2Publication Date: 2015-06-09
- Inventor: Chun-Yang Tsai , Yu-Wei Ting , Kuo-Ching Huang
- Applicant: TAIWAN SEMICONDCUTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; H01L45/00 ; H01L27/24
Abstract:
A method for operating a multi-level resistive random access memory (RRAM) cell having a current-controlling device and a RRAM device connected together. The method is free of a “forming” step and includes setting the RRAM device to one of resistance levels by controlling the current-controlling device to one of current levels. The setting the RRAM device includes applying a first voltage to a top electrode of the RRAM device and applying a second voltage to a bottom electrode of the RRAM device. The second voltage is higher than the first voltage.
Public/Granted literature
- US20130336041A1 Structure and Method for a Forming Free Resistive Random Access Memory with Multi-Level Cell Public/Granted day:2013-12-19
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