Invention Grant
- Patent Title: Semiconductor device and methods of manufacturing and operating the same
- Patent Title (中): 半导体器件及其制造和操作方法
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Application No.: US14198064Application Date: 2014-03-05
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Publication No.: US09053796B2Publication Date: 2015-06-09
- Inventor: Keon Soo Shim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0127171 20131024
- Main IPC: G11C16/10
- IPC: G11C16/10 ; H01L27/115 ; G11C16/34 ; G11C16/04

Abstract:
A semiconductor device includes a memory cell array including a vertical channel layer, two or more selection transistors, and a plurality of memory cells formed along the vertical channel; a peripheral circuit suitable for programming the two or more selection transistors and the memory cells; and a control circuit suitable for controlling the peripheral circuit to decrease a pass voltage applied to one word line adjacent to two or more selection lines coupled to the respective selection transistors, during a program operation in which the peripheral circuit applies a program voltage to the two or more selection lines and applies the pass voltage to a plurality of word lines connected to the memory cells.
Public/Granted literature
- US20150117108A1 SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING AND OPERATING THE SAME Public/Granted day:2015-04-30
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