Invention Grant
- Patent Title: Fast exit from DRAM self-refresh
- Patent Title (中): 快速退出DRAM自刷新
-
Application No.: US13533476Application Date: 2012-06-26
-
Publication No.: US09053812B2Publication Date: 2015-06-09
- Inventor: Kuljit S. Bains
- Applicant: Kuljit S. Bains
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Vincent Anderson Law PC
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C11/406

Abstract:
Embodiments of the invention describe a dynamic random access memory (DRAM) device that may abort a self-refresh mode to improve the exit time from a DRAM low power state of self-refresh. During execution of a self-refresh mode, the DRAM device may receive a signal (e.g., a device enable signal) from a memory controller operatively coupled to the DRAM device. The DRAM device may abort the self-refresh mode in response to receiving the signal from the memory controller.
Public/Granted literature
- US20120331220A1 FAST EXIT FROM DRAM SELF-REFRESH Public/Granted day:2012-12-27
Information query