Invention Grant
- Patent Title: Silicon carbide single crystal and manufacturing method of the same
- Patent Title (中): 碳化硅单晶及其制造方法相同
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Application No.: US13194621Application Date: 2011-07-29
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Publication No.: US09053834B2Publication Date: 2015-06-09
- Inventor: Fusao Hirose , Jun Kojima , Kazutoshi Kojima , Tomohisa Kato , Ayumu Adachi , Koichi Nishikawa
- Applicant: Fusao Hirose , Jun Kojima , Kazutoshi Kojima , Tomohisa Kato , Ayumu Adachi , Koichi Nishikawa
- Applicant Address: JP Kariya JP Toyota
- Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Kariya JP Toyota
- Agency: Posz Law Group, PLC
- Priority: JP2010-172287 20100730
- Main IPC: H01B1/04
- IPC: H01B1/04 ; C30B31/00 ; C30B29/36 ; C30B23/02 ; C30B23/00
Abstract:
A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2×1019 cm−3 or higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.
Public/Granted literature
- US20120025153A1 SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2012-02-02
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