Invention Grant
- Patent Title: System and method of ion neutralization with multiple-zoned plasma flood gun
- Patent Title (中): 多区等离子喷枪离子中和的系统和方法
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Application No.: US13439124Application Date: 2012-04-04
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Publication No.: US09053907B2Publication Date: 2015-06-09
- Inventor: Chun-Lin Chang , Chih-Hong Hwang , Wen-Yu Ku , Chi-Ming Yang , Chin-Hsiang Lin
- Applicant: Chun-Lin Chang , Chih-Hong Hwang , Wen-Yu Ku , Chi-Ming Yang , Chin-Hsiang Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: A61N5/00
- IPC: A61N5/00 ; G21G5/00 ; H01J37/317 ; G21K1/14
Abstract:
An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.
Public/Granted literature
- US20130264498A1 SYSTEM AND METHOD OF ION NEUTRALIZATION WITH MULTIPLE-ZONED PLASMA FLOOD GUN Public/Granted day:2013-10-10
Information query
