Invention Grant
US09053908B2 Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching
有权
用于在衬底蚀刻期间控制衬底DC偏压和离子能量和角分布的方法和装置
- Patent Title: Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching
- Patent Title (中): 用于在衬底蚀刻期间控制衬底DC偏压和离子能量和角分布的方法和装置
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Application No.: US14031793Application Date: 2013-09-19
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Publication No.: US09053908B2Publication Date: 2015-06-09
- Inventor: Saravanapriyan Sriraman , Alexander Paterson
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: C03C15/00
- IPC: C03C15/00 ; H01J37/32

Abstract:
A variable capacitor is provided within a radiofrequency (RF) power transmission path to a bias electrode, in addition to an impedance matching circuit provided within the RF power transmission path to the bias electrode. An RF power supply is operated in a pulsed mode to transmit pulses of RF power through the RF power transmission path to the bias electrode. A capacitance of the variable capacitor is set to control a rate at which a DC bias voltage builds up on a substrate present above the bias electrode during each pulse of RF power. The rate at which the DC bias voltage builds up on the substrate controls an ion energy distribution and an ion angular distribution within a plasma exposed to an electromagnetic field emanating from the substrate.
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