Invention Grant
- Patent Title: Magnetron sputtering target and process for producing the same
- Patent Title (中): 磁控溅射靶及其制造方法
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Application No.: US13813737Application Date: 2011-07-29
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Publication No.: US09053910B2Publication Date: 2015-06-09
- Inventor: Takanobu Miyashita , Yasuyuki Goto
- Applicant: Takanobu Miyashita , Yasuyuki Goto
- Applicant Address: JP Tokyo
- Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2010-178199 20100806
- International Application: PCT/JP2011/067475 WO 20110729
- International Announcement: WO2012/017952 WO 20120209
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; B22F3/12 ; B22F1/02 ; C22C19/05 ; C22C19/07 ; C22C38/30 ; C22C32/00 ; C22C1/04 ; G11B5/851 ; H01F41/18
Abstract:
A magnetron sputtering target containing a ferromagnetic metal element includes a magnetic phase containing the ferromagnetic metal element; a plurality of non-magnetic phases containing the ferromagnetic metal element, the plurality of non-magnetic phases containing a different constituent element from each other or containing constituent elements at different ratios from each other; and an oxide phase. Regions of the magnetic phase and the plurality of non-magnetic phases are separated from each other by the oxide phase.
Public/Granted literature
- US20130175166A1 MAGNETRON SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME Public/Granted day:2013-07-11
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