Invention Grant
US09053929B1 Method and system for integrated MEMS and NEMS using deposited thin films having pre-determined stress states
有权
使用具有预定应力状态的沉积薄膜的集成MEMS和NEMS的方法和系统
- Patent Title: Method and system for integrated MEMS and NEMS using deposited thin films having pre-determined stress states
- Patent Title (中): 使用具有预定应力状态的沉积薄膜的集成MEMS和NEMS的方法和系统
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Application No.: US13111473Application Date: 2011-05-19
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Publication No.: US09053929B1Publication Date: 2015-06-09
- Inventor: Michael A. Huff , Paul Sunal
- Applicant: Michael A. Huff , Paul Sunal
- Applicant Address: US VA Reston
- Assignee: Corporation For National Research Initiatives
- Current Assignee: Corporation For National Research Initiatives
- Current Assignee Address: US VA Reston
- Agency: Nixon & Vanderhye, PC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/66
Abstract:
A method and system are disclosed for controlling the state of stress in deposited thin films on microelectronics wafers for the integration of MEMS and NEMS devices with microelectronics. According to the method and system, various process parameters including: process pressure; substrate temperature; deposition rate; and ion-beam energies (controlled via the ion beam current, voltage, signal frequency and duty cycle) are varied using a step-by-step methodology to arrive at a pre-determined desired state of stress in thin films deposited using PVD at low temperatures and desired stress states onto wafers or substrates having microelectronics processing performed on them.
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