Invention Grant
- Patent Title: Method for forming a graphene layer on the surface of a substrate including a silicon layer
- Patent Title (中): 在包括硅层的基板的表面上形成石墨烯层的方法
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Application No.: US14348653Application Date: 2012-09-28
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Publication No.: US09053933B2Publication Date: 2015-06-09
- Inventor: Abdelkarim Ouerghi
- Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
- Applicant Address: FR Paris
- Assignee: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
- Current Assignee: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
- Current Assignee Address: FR Paris
- Agency: Sughrue Mion, PLLC
- Priority: FR1158818 20110930
- International Application: PCT/EP2012/069232 WO 20120928
- International Announcement: WO2013/045641 WO 20130404
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/16 ; C01B31/04 ; B82Y30/00 ; B82Y40/00
Abstract:
The invention relates to a method for forming a graphene layer (105) on the surface of a substrate (100) including a silicon layer (101), the method comprising the consecutive steps of: forming (1) a silicon-carbide film (103) on a free surface of the silicon layer and gradually heating the substrate until the silicon of at least the first row of atoms of the silicon-carbide film is sublimated so as to form the graphene layer on the silicon-carbide film. According to the invention, a silicon layer, the free surface of which is stepped, is used.
Public/Granted literature
- US20140242784A1 METHOD FOR FORMING A GRAPHENE LAYER ON THE SURFACE OF A SUBSTRATE INCLUDING A SILICON LAYER Public/Granted day:2014-08-28
Information query
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