Invention Grant
US09053936B2 Layout method of semiconductor device with junction diode for preventing damage due to plasma charge
有权
具有结二极管的半导体器件的布局方法,用于防止等离子体电荷引起的损坏
- Patent Title: Layout method of semiconductor device with junction diode for preventing damage due to plasma charge
- Patent Title (中): 具有结二极管的半导体器件的布局方法,用于防止等离子体电荷引起的损坏
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Application No.: US13613976Application Date: 2012-09-13
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Publication No.: US09053936B2Publication Date: 2015-06-09
- Inventor: Soo-Young Kim , Jong-Hak Won
- Applicant: Soo-Young Kim , Jong-Hak Won
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2007-0030043 20070327
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/06

Abstract:
A method for forming a unit layout pattern includes: forming first through third active regions in the unit layout pattern, each of the first through third active regions aligning and extending along a length in a first direction and having a width in a second direction perpendicular to the first direction; forming first and second gate regions on the first and second active regions, the first and second gate regions electrically connected to each other; forming the first active region of a first conductive type within a second conductive type well region; forming the second active region of a second conductive type; and forming the third active region connected with the first and second gate regions to form a junction diode, the third active region being located between the first or the second active region and an end of the length in the first direction of the unit pattern.
Public/Granted literature
- US20130011982A1 LAYOUT METHOD OF SEMICONDUCTOR DEVICE WITH JUNCTION DIODE FOR PREVENTING DAMAGE DUE TO PLASMA CHARGE Public/Granted day:2013-01-10
Information query
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