Invention Grant
US09053951B2 Massively parallel interconnect fabric for complex semiconductor devices
有权
用于复杂半导体器件的大规模并行互连结构
- Patent Title: Massively parallel interconnect fabric for complex semiconductor devices
- Patent Title (中): 用于复杂半导体器件的大规模并行互连结构
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Application No.: US13329266Application Date: 2011-12-17
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Publication No.: US09053951B2Publication Date: 2015-06-09
- Inventor: Majid Bemanian , Farhang Yazdani
- Applicant: Majid Bemanian , Farhang Yazdani
- Agency: Maxvalueip LLC
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L25/065 ; H01L23/00 ; H01L25/18 ; H01L23/13 ; H01L23/525

Abstract:
An embodiment of this invention uses a massive parallel interconnect fabric (MPIF) at the flipped interface of a core die substrate (having the core logic blocks) and a context die (used for in circuit programming/context/customization of the core die substrate), to produce ASIC-like density and FPGA-like flexibility/programmability, while reducing the time and cost for development and going from prototyping to production, reducing cost per die, reducing or eliminating NRE, and increasing performance. Other embodiments of this invention enable debugging complex SoC through large contact points provided through the MPIF, provide for multi-platform functionality, and enable incorporating FGPA core in ASIC platform through the MPIF.
Public/Granted literature
- US20120086050A1 Massively Parallel Interconnect Fabric for Complex Semiconductor Devices Public/Granted day:2012-04-12
Information query
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