Invention Grant
- Patent Title: Trench capacitor with spacer-less fabrication process
- Patent Title (中): 沟槽电容器，无间隔制造工艺
-
Application No.: US13800488Application Date: 2013-03-13
-
Publication No.: US09053956B2Publication Date: 2015-06-09
- Inventor: Chengwen Pei , Xi Li , Geng Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Joseph P. Abate; Howard H. Cohn
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/76 ; H01L29/06 ; H01L21/308 ; H01L29/66 ; H01L29/94 ; H01L21/84 ; H01L27/12
Abstract:
A trench capacitor and method of fabrication are disclosed. The SOI region is doped such that a selective isotropic etch used for trench widening does not cause appreciable pullback of the SOI region, and no spacers are needed in the upper portion of the trench.
Public/Granted literature
- US20130193563A1 TRENCH CAPACITOR WITH SPACER-LESS FABRICATION PROCESS Public/Granted day:2013-08-01
Information query
IPC分类:
