Invention Grant
US09053976B2 Structure and production process of a microelectronic 3D memory device of flash NAND type
有权
闪存NAND型微电子3D存储器件的结构和生产工艺
- Patent Title: Structure and production process of a microelectronic 3D memory device of flash NAND type
- Patent Title (中): 闪存NAND型微电子3D存储器件的结构和生产工艺
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Application No.: US13003111Application Date: 2009-07-10
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Publication No.: US09053976B2Publication Date: 2015-06-09
- Inventor: Thomas Ernst , Gabriel Molas , Barbara De Salvo , Stephane Becu
- Applicant: Thomas Ernst , Gabriel Molas , Barbara De Salvo , Stephane Becu
- Applicant Address: FR Paris
- Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0854729 20080710
- International Application: PCT/EP2009/058870 WO 20090710
- International Announcement: WO2010/004047 WO 20100114
- Main IPC: H01L29/80
- IPC: H01L29/80 ; H01L27/115 ; H01L21/822 ; H01L27/06 ; H01L27/12
Abstract:
A microelectronic flash memory device including a plurality of memory cells including transistors fitted with a matrix of channels connecting a block of common source to a second block on which bit lines rest, the transistors also being formed by a plurality of gates including at least one gate material, including a first selection gate coating the channels, a plurality of control gates coating the channels, a plurality of second selection gates each coating the channels of the same row and the matricial arrangement, at least one or more of the gates based on superposition of layers including at least one first layer of dielectrical material, at least one charge store zone, and at least one second layer of dielectrical material.
Public/Granted literature
- US20110169067A1 STRUCTURE AND PRODUCTION PROCESS OF A MICROELECTRONIC 3D MEMORY DEVICE OF FLASH NAND TYPE Public/Granted day:2011-07-14
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