Invention Grant
US09053982B2 Local tailoring of fingers in multi-finger fin field effect transistors
有权
多指鳍状场效应晶体管的手指局部定制
- Patent Title: Local tailoring of fingers in multi-finger fin field effect transistors
- Patent Title (中): 多指鳍状场效应晶体管的手指局部定制
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Application No.: US13679284Application Date: 2012-11-16
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Publication No.: US09053982B2Publication Date: 2015-06-09
- Inventor: Markus Brink , Josephine B. Chang , Michael A. Guillorn , HsinYu Tsai
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/12
Abstract:
A cluster of semiconductor fins is formed on an insulator layer. A masking material layer is formed over the array of semiconductor fins such that spaces between adjacent semiconductor fins are filled with the masking material layer. A photoresist layer is applied over the masking material layer, and is lithographically patterned. The masking material layer is etched to physically expose a sidewall surface of a portion of an outermost semiconductor fin in regions not covered by the photoresist layer. A recessed region is formed in the insulator layer such that an edge of the recessed region is formed within an area from which a portion of the semiconductor fin is removed. The photoresist layer and the masking material layer are removed. Within the cluster, a region is provided that has a lesser number of semiconductor fins than another region in which semiconductor fins are not etched.
Public/Granted literature
- US20140138771A1 LOCAL TAILORING OF FINGERS IN MULTI-FINGER FIN FIELD EFFECT TRANSISTORS Public/Granted day:2014-05-22
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