Invention Grant
US09053988B2 TFT array substrate, manufacturing method of the same and display device
有权
TFT阵列基板及其制造方法以及显示装置
- Patent Title: TFT array substrate, manufacturing method of the same and display device
- Patent Title (中): TFT阵列基板及其制造方法以及显示装置
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Application No.: US13825644Application Date: 2012-12-21
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Publication No.: US09053988B2Publication Date: 2015-06-09
- Inventor: Qiyu Shen
- Applicant: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201210181978 20120604
- International Application: PCT/CN2012/087157 WO 20121221
- International Announcement: WO2013/181915 WO 20131212
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L29/04 ; H01L29/10 ; H01L31/036 ; H01L27/12 ; H01L21/77 ; H01L29/786

Abstract:
According to embodiments of the invention, a TFT array substrate, a manufacturing method of the TFT array substrate and a display device are provided. The method comprises: depositing a metal film on a substrate, and forming a gate electrode and a gate line; forming a gate insulating layer and a passivation layer on the substrate; depositing a transparent conductive layer, a first source/drain metal layer and a first ohmic contact layer, and forming a drain electrode, a pixel electrode, a data line, and a first ohmic contact layer pattern provided on the drain electrode; and depositing a semiconductor layer, a second ohmic contact layer and a second source/drain metal layer, and forming a source electrode, a second ohmic contact layer pattern provided below the source electrode, and a semiconductor channel between the source electrode and the drain electrode.
Public/Granted literature
- US20140070219A1 TFT ARRAY SUBSTRATE, MANUFACTURING METHOD OF THE SAME AND DISPLAY DEVICE Public/Granted day:2014-03-13
Information query
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