Invention Grant
- Patent Title: Method of making 3D integration microelectronic assembly for integrated circuit devices
- Patent Title (中): 集成电路器件的3D集成微电子组件的方法
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Application No.: US14013980Application Date: 2013-08-29
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Publication No.: US09054013B2Publication Date: 2015-06-09
- Inventor: Vage Oganesian
- Applicant: Optiz, Inc.
- Applicant Address: US CA Palo Alto
- Assignee: Optiz, Inc.
- Current Assignee: Optiz, Inc.
- Current Assignee Address: US CA Palo Alto
- Agency: DLA Piper LLP (US)
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/146 ; H01L23/14 ; H01L23/498 ; H01L21/48 ; H01L23/538 ; H01L23/00

Abstract:
A microelectronic assembly for packaging/encapsulating IC devices, which includes a crystalline substrate handler having opposing first and second surfaces and a cavity formed into the first surface, a first IC device disposed in the cavity and a second IC device mounted to the second surface, and a plurality of interconnects formed through the crystalline substrate handler. Each of the interconnects includes a hole formed through the crystalline substrate handler from the first surface to the second surface, a compliant dielectric material disposed along the hole's sidewall, and a conductive material disposed along the compliant dielectric material and extending between the first and second surfaces. The compliant dielectric material insulates the conductive material from the sidewall. The second IC device, which can be an image sensor, is electrically coupled to the conductive materials of the plurality of interconnects. The first IC can be a processor for processing the signals from the image sensor.
Public/Granted literature
- US20140004646A1 Method Of Making 3D Integration Microelectronic Assembly For Integrated Circuit Devices Public/Granted day:2014-01-02
Information query
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