Invention Grant
- Patent Title: Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures
- Patent Title (中): 具有层间结构的厚氮化物半导体结构和制造厚氮化物半导体结构的方法
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Application No.: US13751804Application Date: 2013-01-28
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Publication No.: US09054017B2Publication Date: 2015-06-09
- Inventor: Adam William Saxler , Albert Augustus Burk, Jr.
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, PA
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L29/15 ; H01L21/02
Abstract:
A semiconductor structure includes a substrate, a nucleation layer on the substrate, a compositionally graded layer on the nucleation layer, and a layer of a nitride semiconductor material on the compositionally graded layer. The layer of nitride semiconductor material includes a plurality of substantially relaxed nitride interlayers spaced apart within the layer of nitride semiconductor material. The substantially relaxed nitride interlayers include aluminum and gallium and are conductively doped with an n-type dopant, and the layer of nitride semiconductor material including the plurality of nitride interlayers has a total thickness of at least about 2.0 μm.
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