Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13579815Application Date: 2011-07-29
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Publication No.: US09054022B2Publication Date: 2015-06-09
- Inventor: Takeyoshi Masuda
- Applicant: Takeyoshi Masuda
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Tamatane J. Aga
- Priority: JP2010-174664 20100803
- International Application: PCT/JP2011/067501 WO 20110729
- International Announcement: WO2012/017958 WO 20120209
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/16 ; H01L29/04 ; H01L29/423 ; H01L29/66 ; H01L29/739 ; H01L29/78 ; H01L29/861 ; H01L21/3065 ; H01L21/04 ; H01L29/06
Abstract:
A method for manufacturing a high-quality semiconductor device having stable characteristics is provided. The method for manufacturing the semiconductor device includes the steps of: preparing a silicon carbide layer having a main surface; forming a trench in the main surface by removing a portion of the silicon carbide layer; and removing a portion of a side wall of the trench by thermal etching.
Public/Granted literature
- US20120309195A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-12-06
Information query
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